| Symbol | Conditions | Values | Units | | | | I FAV | sin. 180; T c = 85 (100) °C | 212 ( 165) | A | | | | I FSM | T vj = 25 °C; 10 ms | 6600 | A | | | T vj = 125 °C; 10 ms | 5500 | A | | i²t | T vj = 25 °C; 8,3 ... 10 ms | 217800 | A²s | | | T vj = 125 °C; 8,3 ... 10 ms | 151250 | A²s | | | | V F | T vj = 25 °C; I F = 500 A | max. 1,4 | V | | V (TO) | T vj = 135 °C | max. 0,75 | V | | r T | T vj = 135 °C | max. 1,05 | mOhm | | I RD | T vj = 135 °C; V RD = V RRM | max. 9 | mA | | | | R th(j-c) | per diode / per module | 0,18 / 0,09 | K/W | | R th(c-s) | per diode / per module | 0,1 / 0,05 | K/W | | T vj | | - 40 ... + 135 | °C | | T stg | | - 40 ... + 135 | °C | | | | V isol | a. c. 50 Hz; r.m.s.; 1 s / 1 min. | 3600 / 3000 | V~ | | M s | to heatsink | 5 ± 15 % | Nm | | M t | to terminals | 5 ± 15 % | Nm |
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