| Symbol | Conditions | Values | Units | | | | I FAV | sin. 180; T c = 100 °C | 380 | A | | | | I FSM | T vj = 25 °C; 10 ms | 11000 | A | | | T vj = 150 °C; 10 ms | 10000 | A | | i²t | T vj = 25 °C; 8,3 ... 10 ms | 605000 | A²s | | | T vj = 150 °C; 8,3 ... 10 ms | 500000 | A²s | | | | V F | T vj = 25 °C; I F = 1000 A | max. 1,25 | V | | V (TO) | T vj = 150 °C | max. 0,8 | V | | r T | T vj = 150 °C | max. 0,35 | mOhm | | I RD | T vj = 150 °C; V RD = V RRM | max. 15 | mA | | | | R th(j-c) | cont. per diode / per module | 0,11 / 0,055 | K/W | | | sin. 180 per diode / per module | 0,116 / 0,058 | K/W | | R th(c-s) | per diode / per module | 0,04 / 0,02 | K/W | | T vj | | - 40 ... + 150 | °C | | T stg | | - 40 ... + 130 | °C | | | | V isol | a. c. 50 Hz; r.m.s.; 1 s / 1 min. | 3600 / 3000 | V~ | | V isol | a. c. 50 Hz; r.m.s.; 1 s / 1 min. for SKK ...H4 | 4800 / 4000 | V~ | | M s | to heatsink | 5 ± 15 % | Nm | | M t | to terminals | 9 ± 15 % 1) | Nm |
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