| Symbol | Conditions | Values | Units | | | | I FAV | sin. 180; T c = 85 (100) °C | 82 ( 57) | A | | I D | P3/120; T a = 45 °C; B2 / B6 | 63 / 70 | A | | | P3/180F; T a = 35 °C; B2 / B6 | 135 / 175 | A | | | | I FSM | T vj = 25 °C; 10 ms | 2000 | A | | | T vj = 125 °C; 10 ms | 1750 | A | | i²t | T vj = 25 °C; 8,3 ... 10 ms | 20000 | A²s | | | T vj = 125 °C; 8,3 ... 10 ms | 15000 | A²s | | | | V F | T vj = 25 °C; I F = 300 A | max. 1,55 | V | | V (TO) | T vj = 125 °C | max. 0,85 | V | | r T | T vj = 125 °C | max. 1,8 | mOhm | | I RD | T vj = 125 °C; V RD = V RRM | max. 4,5 | mA | | | | R th(j-c) | per diode / per module 1) | 0,4 / 0,2 | K/W | | R th(c-s) | per diode / per module 1) | 0,2 / 0,1 | K/W | | T vj | | - 40 ... + 125 | °C | | T stg | | - 40 ... + 125 | °C | | | | V isol | a. c. 50 Hz; r.m.s.; 1 s / 1 min. | 3600 / 3000 | V~ | | V isol | a. c. 50 Hz; r.m.s.; 1 s / 1 min. for SKK...H4 | 4800 / 4000 | V~ | | M s | to heatsink | 5 ± 15 % | Nm | | M t | to terminals | 3 ± 15 % | Nm |
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